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PTF 102028 18 Watts, 860-960 MHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 102028 is an 18-watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 26 Volts - Output Power = 18 Watts Min - Power Gain = 15 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability
* * * * *
Typical Output Power & Efficiency vs. Input Power
24 80 Output Pow er Efficiency 70 60 50
Output Power (Watts)
20 16 12 8 4 0 0.0
Efficiency (%)x
102
123 456 985 5A
028
VDD = 26 V IDQ = 130 mA f = 960 MHz
0.3 0.5 0.8
40 30 20 1.0
Input Power (Watts)
Package 20251
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
14 18 50 --
Typ
15 20 55 --
Max
-- -- -- 5:1
Units
dB Watts % --
e
1
PTF 102028
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.9
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 58 0.33 150 3.0
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Gain (dB) & Output Power (W) x
21 20 19 18 17 Gain 16 15 860 Output Pow er 70 65
Efficiency (%) 16
Broadband Test Fixture Performance
20 60 50 40 12 Gain (dB) 30 0 -20 5 -10 10 -15 Return Loss (dB) -20 0 -25 940 950 960
60
Efficiency (%)x
VDD = 26 V IDQ = 130 mA
Efficiency
55 50 45 40
8
880
900
920
940
35 960
4 920
930
Frequency (MHz)
Frequency (MHz)
2
Return Loss
VDD = 26 V IDQ = 130 mA POUT = 18 W
Gain
Efficiency
e
Power Gain vs. Output Power
16 IDQ = 130
24
102028
Output Power (at 1 dB Compression) vs. Supply Voltage
Output Power (Watts) X
Power Gain (dB) X
15 IDQ = 65 mA 14 IDQ = 35 mA 13
22 20 18 16 14
VDD = 26 V f = 960 MHz
IDQ = 130 mA f = 960 MHz
12 0.1 1.0 10.0 100.0
22
27
32
37
Output Power (Watts) X
Supply Voltage (Volts) X
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0 -10
Capacitance vs. Supply Voltage
50 6 5
Cds and Cgs (pF)x
IMD (dBc) X
-20 -30 -40 -50 -60 0
f1 = 959.900 MHz f2 =960.000 MHz
3rd Order 5th 7th
30 20 10 0
VGS = 0 V f = 1 MHz
3 2 1
Cds Crss
0 10 20 30 40
0
5
10
15
20
25
Output Power (Watts-PEP) X
Supply Voltage (Volts) x
Bias Voltage vs. Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
Bias Voltage (V) x
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0.075 0.585 1.095 30 0.33 0.84 1.35 80 130
Temp. (C)
3
Crss (pF) x
VDD = 26 V IDQ = 130 mA
40
Cgs
4
PTF 102028
Impedance Data
R -->
e
D
Z Source
Z Load
S
Frequency
MHz 860 880 900 920 960 R
Z Source W
jX 2.7 2.6 2.4 2.3 2.1 R 5.8 5.5 5.0 4.8 4.7 2.0 2.0 2.0 1.9 1.9
Z Load W
jX 4.4 4.6 5.0 5.1 5.3
TO W AR D LOAD
0.0
0.1
G TH S
0.1
4
V
ELE N
0.2
0 .1
G
O W AR
D GE
NER
AT O
Z Source
0. 2
VDD = 26 V, POUT = 18 W, IDQ = 130 mA
Z0 = 50 W
Z Load
960 MHz 860 MHz 860 MHz 960 MHz
e
Typical Scattering Parameters
(VDS = 26 V, ID = 500 mA)
102028
f (MHz)
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
S11 Mag
0.828 0.821 0.817 0.825 0.836 0.847 0.859 0.870 0.883 0.892 0.902 0.909 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 0.952 0.952 0.953 0.956 0.954 0.952 0.952 0.949 0.948 0.947 0.946 0.945 0.943 0.942 0.945 0.947 0.949 0.951 0.952 0.956
S21 Ang
-120 -138 -148 -155 -160 -164 -167 -170 -172 -174 -176 -179 180 178 176 174 173 171 170 169 167 166 164 163 162 160 159 157 156 154 153 151 150 148 147 145 143 142 140 139 137 136 134
S12 Ang
103 87.8 77.5 69.6 62.7 56.4 51.3 45.6 42.2 36.9 33.3 29.6 26.7 23.6 21.1 17.5 16.3 12.5 10.8 8.51 5.94 3.97 4.03 0.16 -0.92 -1.19 -5.01 -5.67 -6.40 -6.60 -7.30 -7.58 -7.59 -7.59 -7.60 -7.64 -6.40 -6.23 -6.20 -5.74 -5.20 -4.36 -4.30
S22 Ang
20.6 10.7 6.0 6.5 9.7 20.7 41.5 64.2 83.2 92.6 97.9 98.5 98.6 98.7 99.3 98.6 98.3 95.8 95.4 92.5 91.7 91.4 90.5 87.1 87.6 86.6 84.9 84.9 84.2 83.9 83.7 83.1 82.2 81.6 81.4 80.9 79.8 79.6 79.5 80.1 79.4 79.0 76.1
Mag
27.9 19.2 14.1 10.8 8.75 7.09 5.96 5.02 4.31 3.71 3.20 2.81 2.48 2.19 1.97 1.77 1.61 1.47 1.31 1.21 1.12 1.02 0.952 0.902 0.805 0.781 0.732 0.688 0.660 0.619 0.573 0.591 0.523 0.492 0.498 0.453 0.442 0.433 0.406 0.401 0.392 0.376 0.357
Mag
0.015 0.014 0.013 0.011 0.009 0.007 0.006 0.007 0.008 0.011 0.014 0.016 0.020 0.022 0.025 0.028 0.032 0.035 0.039 0.043 0.046 0.049 0.053 0.057 0.060 0.065 0.068 0.072 0.078 0.084 0.085 0.097 0.096 0.106 0.113 0.119 0.124 0.134 0.135 0.150 0.154 0.171 0.171
Mag
0.597 0.576 0.571 0.602 0.628 0.661 0.698 0.723 0.754 0.783 0.805 0.831 0.845 0.860 0.880 0.890 0.904 0.916 0.922 0.930 0.937 0.945 0.945 0.955 0.951 0.958 0.955 0.963 0.953 0.967 0.950 0.959 0.950 0.949 0.953 0.952 0.947 0.957 0.953 0.946 0.955 0.950 0.949
Ang
-65.9 -79.6 -91.7 -102 -110 -118 -124 -130 -135 -140 -144 -149 -152 -155 -158 -161 -164 -166 -168 -171 -172 -174 -176 -178 -180 178 177 175 173 172 170 169 167 166 163 163 160 159 157 156 153 153 150
5
PTF 102028
Test Circuit
e
J1
J2
Test Circuit Schematic for f = 960 MHz DUT
l1 l2 l3 l4 l5
PTF 102028 0.098 l 960 MHz 0.050 l 960 MHz 0.139 l 960 MHz 0.256 l 960 MHz 0.040 l 960 MHz
Microstrip 50 W Microstrip 8.4 W Microstrip 8.4 W Microstrip 13.9 W Microstrip 50 W
C1, C2, C4, C8 C3 C5 C6 C7 J1, J2 L1 R1, R2, R3 Circuit Board
Capacitor, 36 pF ATC 100 B Capacitor, 4.7 pF ATC 100 B Capacitor, 0.1, F, 50 V Digi-Key P4525-ND Capacitor, 100 F, 50 V Digi-Key P5182-ND Capacitor, 0.3 pF, 50 V ATC 100 B Connector, SMA, Female, Panel Mount Ericsson, # RPM 513 412/53 4 Turns, 20 AWG, .120 Dia I.D. N/A Resistor, 220 ohm Digi-Key 2.2 QBK .031 " Thick, er = 4.0, AlliedSignal, G200, 2 oz. copper
Assembly Diagram (not to scale) 6
e
Test Circuit
102028
Artwork ( not to scale )
Case Outline Specifications Package 20251
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 2000 Ericsson Inc. EUS/KR 1522-PTF 102028 Uen Rev. A 11-29-00
7

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